Vapor-Phase Cleaning and Corrosion Inhibition of Copper Films by Ethanol and Heterocyclic Amines

Cleaning and passivation of metal surfaces are necessary steps for selective film deposition processes that are attractive for some microelectronic applications (e.g., fully aligned vias or self-aligned contacts). For copper, there is limited knowledge about the mechanisms of the copper oxide reduction process and subsequent passivation layer formation reactions. We have investigated the in situ cleaning (i.e., oxidation and reduction by vapor-phase species) and passivation of chemical mechanical polishing (CMP)-prepared Cu films in an effort to derive the mechanisms associated with selectively tailoring the surface chemistry. By monitoring the interaction of vapor-phase ethanol with the surface species generated after ozone cleaning at 300 degrees C, we find that the optimum procedure to remove these species and avoid byproduct redeposition is to use atomic layer deposition (ALD)-like binary cycles of ethanol and N-2, with active pumping. We have further explored passivation of clean Cu using benzotriazole and 2,2 '-bipyridine in an ALD environment. Both molecules chemisorb on clean Cu in an upright orientation, with respect to the metal surface at temperatures higher than the melting point of the organic inhibitors (100 <= T < 300 degrees C). Both molecules desorb without decomposition from clean Cu above 300 degrees C but not from Cu2O. Previous studies related to the passivation of Cu surfaces using heterocyclic amines have focused on solution-based or ultrahigh vacuum applications of the passivation molecules onto single crystalline Cu samples. The present work explores more industrially relevant vapor-phase passivation of CMP-cleaned, electroplated Cu samples using ALD-like processing conditions and in situ vapor-phase cleaning.