All-Solution-Based Heterogeneous Material Formation for p-n Junction Diodes

All-solution-based devices have potential as the next class of macroscale and multifunctional electronics on versatile amorphous substrates. Different methods and materials have been studied to control the formation of p type and n-type semiconducting materials because forming active materials for transistors and sensors remains a challenge. This study proposes an approach for solution based devices in which a p-n junction diode is fabricated using a solution-based InZnO thin film for the n-type semiconductor and a carbon nanotube network film for the p-type semiconductor. Additionally, the barrier height (similar to 160) meV) is extracted and a p-n junction diode on a plastic film is demonstrated. Although the performance requires further improvements by modifying the interfaces, this printing method may be an interesting approach for all-printed electronics, which can replace conventional Si electronics.