Article
Chemistry, Physical
Chun-Yuan Wang, Chun-Yi Chou, Han-Fang Shiue, Hsing-Yang Chen, Chen-Hsiang Ling, Jing-Jong Shyue, Miin-Jang Chen
Summary: In this paper, the authors investigate a method to alter the work function of TiN thin films using atomic layer annealing (ALA) technique. The results show that by incorporating layer-by-layer atomic layer deposition cycle with argon plasma treatment, the density, stoichiometry, and crystallinity of TiN thin films can be significantly improved at a low temperature of 300 degrees C, resulting in a wide tunability of the TiN metal gate's work function.
APPLIED SURFACE SCIENCE
(2022)
Article
Materials Science, Ceramics
Jeong Woo Shin, Jaehyeong Lee, Keunhoi Kim, Chansong Kwon, Young Bin Park, Heesung Park, Kwanlae Kim, Hyo Suk Ahn, Dongha Shim, Jihwan An
Summary: The study investigated the effect of nitrogen plasma parameters on TiN films processed by PEALD, revealing that highly dense and crystallized TiN films with improved adhesion can be deposited at higher nitrogen plasma power and longer plasma exposure time during the process.
CERAMICS INTERNATIONAL
(2022)
Article
Chemistry, Multidisciplinary
Guibai Xie, Hongwu Bai, Guanghui Miao, Guobao Feng, Jing Yang, Yun He, Xiaojun Li, Yun Li
Summary: This paper discusses the applications of ultra-thin atomic layer deposition nanofilm in the advanced aerospace manufacturing industry, which includes aluminum anti-oxidation and secondary electron suppression. The nanofilm shows potential for promoting system performance and resource consumption in the industry.
Article
Chemistry, Physical
Hwan Oh, Jung-Sik Kim, Hannah R. M. Margavio, Gregory N. Parsons
Summary: In this work, the researchers successfully achieved multi-material ASD by sequentially combining two intrinsic ASD processes. They also found that the properties of PEDOT and W ASD materials are affected by the ASD sequence. Additionally, they demonstrated the feasibility of orthogonal ASD at the nanoscale and showed that the PEDOT layer can control the lateral growth of W onto the non-growth surface.
CHEMISTRY OF MATERIALS
(2023)
Article
Chemistry, Physical
Xiao-Ying Zhang, Duan-Chen Peng, Jing Han, Fang-Bin Ren, Shi-Cong Jiang, Ming-Chun Tseng, Yu-Jiao Ruan, Juan Zuo, Wan-Yu Wu, Dong-Sing Wuu, Chien-Jung Huang, Shui-Yang Lien, Wen-Zhang Zhu
Summary: Aluminum nitride (AlN) thin films with considerable properties were prepared using remote plasma atomic layer deposition (RP-ALD). The properties of AlN films with different growth temperatures were studied, and the characteristics of AlN/GaN and AlN/Al2O3 interfaces were analyzed on sapphire substrates. The experimental results showed that crystal AlN films with a hexagonal wurtzite structure were obtained at 250 degrees C. X-ray photoelectron spectroscopy confirmed the presence of Al-O, Al-O-N complexes, and Al-Al metallic aluminum bonds in the AlN films. High-resolution transmission electron microscopy revealed sharp interfaces of AlN/Al2O3 and AlN/GaN. Photoluminescence measurements confirmed that the AlN buffer layer enhances the quality of GaN grown on sapphire substrates. The high-quality AlN/GaN layers prepared by RP-ALD provide a promising pathway for high-quality GaN-based devices.
SURFACES AND INTERFACES
(2023)
Article
Chemistry, Physical
Yuanyuan Zhu, Zhongchao Zhou, Xu Zhang, Rui Xu, Yongjia Wang, Lina Xu, Hongping Xiao, Xinhua Li, Aidong Li, Guoyong Fang
Summary: Atomic layer deposition (ALD) is an excellent technology used for various nanomaterials preparation in different fields. The ALD of titanium nitride (TiN) using tetra(dimethylamino)titanium (TDMAT) and ammonia as precursors was investigated. The reaction mechanism involved two reactions, the TDMAT reaction and NH3 reaction, which produced thermodynamically and kinetically favorable surface reactions. These insights into ALD of TiN provide guidance for precursor design and ALD growth of other compounds.
SURFACES AND INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Chun-Yuan Wang, Chin- Wang, Sheng-Han Yi, Teng-Jan Chang, Chun-Yi Chou, Yu-Tung Yin, Hsin-Chih Lin, Miin-Jang Chen
Summary: The crystalline phases and dielectric properties of ZrO2 thin films can be tailored by capping a nanoscale TiN layer prepared by plasma-enhanced atomic layer deposition. The in-plane tensile strain induced by the TiN capping layer leads to a dramatic paraelectric-to-antiferroelectric phase transformation in ZrO2 and a significant capacitance enhancement. This study demonstrates that the as-deposited TiN capping layer can effectively modulate the dielectric properties of nanoscale thin films without postannealing treatment, benefiting various applications such as supercapacitors and nanoelectronics.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Biochemistry & Molecular Biology
Elina Kylmaoja, Jani Holopainen, Faleh Abushahba, Mikko Ritala, Juha Tuukkanen
Summary: Hydroxyapatite (HA) coatings prepared using atomic layer deposition (ALD) show good biocompatibility in terms of cell adhesion and viability, opening up new possibilities for developing improved implant coatings.
Article
Biochemistry & Molecular Biology
Shicong Jiang, Wan-Yu Wu, Fangbin Ren, Chia-Hsun Hsu, Xiaoying Zhang, Peng Gao, Dong-Sing Wuu, Chien-Jung Huang, Shui-Yang Lien, Wenzhang Zhu
Summary: The application of (In, Al, Ga)N materials in photovoltaic devices has attracted much attention. However, to deposit high-quality GaN material as a foundation is essential. Plasma-enhanced atomic layer deposition (PEALD) combines the advantages of ALD process with plasma utilization and has been used to deposit thin films with various requirements. In this study, NH3-containing plasma was used to eliminate the residual oxygen during the growth of GaN films, which significantly improved the quality of the films. The plasma power controlled NH2, NH, and H radicals showed strong influence on the oxygen content, growth rate, crystallinity, and surface roughness of the GaN films.
INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES
(2022)
Article
Materials Science, Multidisciplinary
Lauri Palmolahti, Harri Ali-Loytty, Markku Hannula, Jesse Saari, Weimin Wang, Antti Tukiainen, Kimmo Lahtonen, Mika Valden
Summary: This study investigated the effect of growth temperature on precursor traces in ALD TiO2 films and thermally-induced processes, demonstrating that increasing growth temperature reduced N bearing precursor traces and made TiO2 more easily reducible. Vacuum annealing of TiO2 influenced crystallization and defect formation, with different nitrogen content resulting in different crystalline forms.
Article
Chemistry, Physical
Hong Keun Chung, Sung Ok Won, Yongjoo Park, Jin-Sang Kim, Tae Joo Park, Seong Keun Kim
Summary: TiO2 films were deposited by Atomic Layer Deposition (ALD) using (CpMe5)Ti(OMe)(3) as precursor and O-3 as co-reactant, showing high thermal stability and a wide temperature range. With increasing growth temperature, impurity content decreased, grain size reduced, and a uniform morphology with fine grains was achieved at temperatures above 300 degrees C.
APPLIED SURFACE SCIENCE
(2021)
Article
Biochemistry & Molecular Biology
Elina Kylmaoja, Faleh Abushahba, Jani Holopainen, Mikko Ritala, Juha Tuukkanen
Summary: Coating bone implants with hydroxyapatite (HA) has benefits for osseointegration, but there may be differences in monocyte differentiation and material resorption compared to natural bone. In this study, ALD-HA coating on a titanium substrate was compared with bovine bone, and it was found that ALD-HA led to the presence of non-resorbing cells instead of resorbing osteoclasts. The topographical properties of ALD-HA, such as surface roughness, may play a role in this cellular reaction.
Article
Nanoscience & Nanotechnology
Felix Blendinger, Daniel Seitz, Andreas Ottenschlager, Monika Fleischer, Volker Bucher
Summary: TiO2 thin films deposited on PEEK using PEALD method show promising osteogenic properties, enhancing the bioactivity of the implants effectively.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Materials Science, Multidisciplinary
Leonid Yu. Beliaev, Evgeniy Shkondin, Andrei V. Lavrinenko, Osamu Takayama
Summary: We conducted a comparative study on the optical properties of 50 nm-thick titanium nitride (TiN) films deposited by different methods and process temperatures, and found that films deposited by pulsed-DC sputtering at 600 degrees C showed the best plasmonic response. These results suggest a direct relationship between the stoichiometry, structural quality, and oxygen incorporation in TiN films and their plasmonic properties.
Article
Chemistry, Physical
Woojin Choi, Sungwoo Lee, Dong-Hoon Han, Hong Taek Lim, Hwanyeol Park, Gun-Do Lee
Summary: DFT calculations were used to study the dissociative reactions of TiCl4 on non-hydroxylated and hydroxylated ?-Al2O3 surfaces. It was found that residual Cl atoms hindered adsorption on the non-hydroxylated surface, while hydroxyl functional groups lowered activation energy for the reactions. This highlights the importance of understanding electronic interactions between reactive molecules and surface functional groups for future memory device design.
APPLIED SURFACE SCIENCE
(2021)