Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain

Title
Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain
Authors
Keywords
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Journal
IEEE Journal of the Electron Devices Society
Volume 3, Issue 3, Pages 164-175
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-01-13
DOI
10.1109/jeds.2015.2390971

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