Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 3, Issue 3, Pages 297-301Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2014.2376411
Keywords
Thin film transistors; thin film; pulse thermal annealing
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Pulse thermal processing (PTP) has been explored for low thermal budget integration of indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The IGZO TFTs are exposed to a broadband (0.2-1.4 mu m) arc lamp radiation spectrum with 100 pulses of 1 m pulse width. With power density of 3.95 kW/cm(2) and 0.1 s total irradiation time, the PTP treated IGZO TFTs showed comparable or improved switching and bias stability properties, at significantly lower thermal budget, to furnace annealed IGZO TFT. The typical field effect mobility mu FE, threshold voltage VT, and sub-threshold gate swing S.S were calculated to be 7.8 cm(2)/V.s, 8.1 V, and 0.22 V/decade, respectively. The observed performance shows promise for low thermal budget TFT integration on flexible substrates exploiting the large-area, scalable PTP technology.
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