Tunneling Magnetoresistance Devices Based on Topological Insulators: Ferromagnet–Insulator–Topological-Insulator Junctions EmployingBi2Se3
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Title
Tunneling Magnetoresistance Devices Based on Topological Insulators: Ferromagnet–Insulator–Topological-Insulator Junctions EmployingBi2Se3
Authors
Keywords
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Journal
Physical Review Applied
Volume 2, Issue 5, Pages -
Publisher
American Physical Society (APS)
Online
2014-11-18
DOI
10.1103/physrevapplied.2.054010
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