Journal
ADVANCED MATERIALS INTERFACES
Volume 1, Issue 8, Pages -Publisher
WILEY
DOI: 10.1002/admi.201400130
Keywords
-
Funding
- National High Technology Research and Development Program of China [2007AA03Z301]
- National Natural Science Foundation of China [61076040]
- Specialized Research Fund for the Doctoral Program of Higher Education of China [2012011111006]
- Natural science Foundation of Anhui Province [J2014AKZR0059]
Ask authors/readers for more resources
A novel two-terminal high-speed nonvolatile memory device is demonstrated featuring the construction of a quasi-metal-insulator-semiconductor (q-MIS) architecture. The quasi-MIS memory takes advantage of an in situ formed amorphous AlOx interfacial layer sandwiched between p-type ZnS nanoribbons (p-ZnSNRs) and a Al electrode. Systematical optimization of the AlOx interfacial layer enables the resultant memory to show excellent memory characteristics, including a fast programming speed of <100 ns, a high current ON/OFF ratio of similar to 10(8), a long retention time of 6 x 10(4) s, and good stability over 12 months. In addition, an interface-state-induced mechanism is proposed to elucidate in detail the memory characteristic for the quasi-MIS structure. This work suggests great potential of such quasi-MIS architecture for high-performance two-terminal memory, and more importantly, signifies the importance of interface engineering for the construction of novel functional nano-devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available