Fundamental role of arsenic flux in nanohole formation by Ga droplet etching on GaAs(001)

Title
Fundamental role of arsenic flux in nanohole formation by Ga droplet etching on GaAs(001)
Authors
Keywords
Droplet epitaxy, Quantum dots, Nanopatterning
Journal
Nanoscale Research Letters
Volume 9, Issue 1, Pages 309
Publisher
Springer Nature
Online
2014-06-18
DOI
10.1186/1556-276x-9-309

Ask authors/readers for more resources

Reprint

Contact the author

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started