3.8 Article

Negative differential resistance and carrier transport of electrically bistable devices based on poly(N-vinylcarbazole)-silver sulfide composites

Journal

NANOSCALE RESEARCH LETTERS
Volume 9, Issue -, Pages -

Publisher

SPRINGER
DOI: 10.1186/1556-276X-9-128

Keywords

Bistable device; Ag2S nanocrystals; PVK; NDR effects; Charge trapping

Funding

  1. National Science Foundation for Distinguished Young Scholars of China [61125505]
  2. National Natural Science Foundation of China [61108063]
  3. Beijing JiaoTong University [2012RC046]

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An electrically bistable device has been fabricated based on poly(N-vinylcarbazole) (PVK)-silver sulfide (Ag2S) composite films using a simple spin-coating method. Current-voltage (I-V) characteristics of the as-fabricated devices exhibit a typical electrical bistability and negative differential resistance (NDR) effect. The NDR effect can be tuned by varying the positive charging voltage and the charging time. The maximum current ratio between the high-conducting state (ON state) and low-conducting state (OFF state) can reach up to 10(4). The carrier transport mechanisms in the OFF and ON states are described by using different models on the basis of the experimental result.

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