Journal
NANOSCALE RESEARCH LETTERS
Volume 8, Issue -, Pages -Publisher
SPRINGER
DOI: 10.1186/1556-276X-8-151
Keywords
Dissolved oxygen; Machining; Catalyst; Lithography; Oxygen reduction; Atomic force microscopy
Funding
- Japan Society for the Promotion of Science [24686020]
- Amano Institute of Technology
- Ichijyu Industrial Science and Technology Promotion Foundation
- Grants-in-Aid for Scientific Research [24686020, 24656101] Funding Source: KAKEN
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We propose the metal-assisted chemical etching of Ge surfaces in water mediated by dissolved oxygen molecules (O-2). First, we demonstrate that Ge surfaces around deposited metallic particles (Ag and Pt) are preferentially etched in water. When a Ge(100) surface is used, most etch pits are in the shape of inverted pyramids. The mechanism of this anisotropic etching is proposed to be the enhanced formation of soluble oxide (GeO2) around metals by the catalytic activity of metallic particles, reducing dissolved O-2 in water to H2O molecules. Secondly, we apply this metal-assisted chemical etching to the nanoscale patterning of Ge in water using a cantilever probe in an atomic force microscopy setup. We investigate the dependences of probe material, dissolved oxygen concentration, and pressing force in water on the etched depth of Ge(100) surfaces. We find that the enhanced etching of Ge surfaces occurs only when both a metal-coated probe and saturated-dissolved-oxygen water are used. In this study, we present the possibility of a novel lithography method for Ge in which neither chemical solutions nor resist resins are needed.
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