Journal
NANOSCALE RESEARCH LETTERS
Volume 8, Issue -, Pages 1-6Publisher
SPRINGER
DOI: 10.1186/1556-276X-8-493
Keywords
In-doped ZnO nanowires; Infrequent [02(2)over-bar3] growth orientation; Large surface-to-volume ratio; Low density of surface traps
Funding
- Natural Science Foundation of China [51172204, 51372223]
- Science and Technology Department of Zhejiang Province [2010R50020]
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Indium-doped ZnO nanowires have been prepared by vapor transport deposition. With increasing In content, the growth orientation of the nanowires switches from [100] to infrequent [023] and the surface becomes rough. No surface-related exciton emission is observed in these nanowires. The results indicate that large surface-to-volume ratio, high free electron concentration, and low density of surface traps can be achieved simultaneously in ZnO nanowires via In doping. These unique properties make In-doped ZnO nanowire a potential material for photocatalysis application, which is demonstrated by the enhanced photocatalytic degradation of Rhodamine B.
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