Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors

Published 2013 View Full Article

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Title
Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors
Authors
Keywords
Amorphous InGaZnO, Thin-film transistor, Er<sub>2</sub>O<sub>3</sub>, Er<sub>2</sub>TiO<sub>5</sub>
Journal
Nanoscale Research Letters
Volume 8, Issue 1, Pages 18
Publisher
Springer Nature
Online
2013-01-09
DOI
10.1186/1556-276x-8-18

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