3.8 Article

Spin-related tunneling through a nanostructured electric-magnetic barrier on the surface of a topological insulator

Journal

NANOSCALE RESEARCH LETTERS
Volume 7, Issue -, Pages 1-6

Publisher

SPRINGER
DOI: 10.1186/1556-276X-7-90

Keywords

sorafenib; polymeric micelle; dextran; poly(DL-lactide-co-glycolide)

Funding

  1. Ministry of Health and Welfare, Republic of Korea [A091047]

Ask authors/readers for more resources

Sorafenib-incoporated nanoparticles were prepared using a block copolymer that is composed of dextran and poly (DL-lactide-co-glycolide) [ DexbLG] for antitumor drug delivery. Sorafenib-incorporated nanoparticles were prepared by a nanoprecipitation-dialysis method. Sorafenib-incorporated DexbLG nanoparticles were uniformly distributed in an aqueous solution regardless of the content of sorafenib. Transmission electron microscopy of the sorafenibincorporated DexbLG nanoparticles revealed a spherical shape with a diameter < 300 nm. Sorafenib-incorporated DexbLG nanoparticles at a polymer/drug weight ratio of 40: 5 showed a relatively uniform size and morphology. Higher initial drug feeding was associated with increased drug content in nanoparticles and in nanoparticle size. A drug release study revealed a decreased drug release rate with increasing drug content. In an in vitro antiproliferation assay using human cholangiocarcinoma cells, sorafenib-incorporated DexbLG nanoparticles showed a similar antitumor activity as sorafenib. Sorafenib-incorporated DexbLG nanoparticles are promising candidates as vehicles for antitumor drug targeting.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

3.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

Article Engineering, Electrical & Electronic

Sensing Performance of SO2, SO3 and NO2 Gas Molecules on 2D Pentagonal PdSe2: A First-Principle Study

Xinyan Xia, Shiying Guo, Lili Xu, Tingting Guo, Zhenhua Wu, Shengli Zhang

Summary: By combining density functional theory and nonequilibrium Green's function, the study systematically investigates the adsorption and sensing properties of SO2, SO3, and NO2 on 2D pentagonal PdSe2. The results show that PdSe2 monolayer exhibits higher sensitivity to NO2 and SO3 gases, making it a potential gas sensing material with high sensitivity.

IEEE ELECTRON DEVICE LETTERS (2021)

Article Chemistry, Multidisciplinary

Influence of Applied Stress on the Ferroelectricity of Thin Zr-Doped HfO2 Films

Yuwei Cai, Qingzhu Zhang, Zhaohao Zhang, Gaobo Xu, Zhenhua Wu, Jie Gu, Junjie Li, Jinjuan Xiang, Huaxiang Yin

Summary: This study investigates the effects of tensile stress and annealing temperature on Zr-doped HfO2 ferroelectric film properties, revealing that tensile stress significantly improves material endurance, while remnant polarization increases with annealing temperature.

APPLIED SCIENCES-BASEL (2021)

Article Engineering, Electrical & Electronic

Ternary Logic Circuit Based on Negative Capacitance Field-Effect Transistors and Its Variation Immunity

Weixing Huang, Huilong Zhu, Yongkui Zhang, Zhenhua Wu, Qiang Huo, Zhongrui Xiao, Kunpeng Jia

Summary: This study presents a ternary logic inverter based on negative capacitance FETs, achieving a third intermediate state without additional footprints and optimizing noise margin by altering ferroelectric thickness or annealing temperature. The impact of remnant polarization and coercive electric field variations on the ternary logic inverter was examined using experimental data, and a ternary logic 8T SRAM with transmission gate logic was proposed, demonstrating nondestructive read and reliable write operations for all three states.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

Article Engineering, Electrical & Electronic

Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process

Yongkui Zhang, Xuezheng Ai, Xiaogen Yin, Huilong Zhu, H. Yang, G. L. Wang, J. J. Li, A. Y. Du, C. Li, W. X. Huang, L. Xie, Y. Y. Li, Y. B. Liu, Y. B. Zhang, K. P. Jia, Z. H. Wu, X. L. Ma, Q. Z. Zhang, S. J. Mao, G. B. Xu, J. J. Xiang, J. F. Gao, X. B. He, Y. H. Lu, G. B. Bai, J. Zhao, Y. L. Li, T. Yang, J. F. Li, H. X. Yin, H. Radamson, J. Luo, C. Zhao, W. W. Wang, T. C. Ye

Summary: The study presented a new type of vertical nanowire and nanosheet field-effect transistors (FETs) called VSAFETs, fabricated with a specific process, suitable for producing high-performing p-type NS and NW VSAFETs.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

Article Engineering, Electrical & Electronic

Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs

Qihang Yang, Guodong Qi, Weizhuo Gan, Zhenhua Wu, Huaxiang Yin, Tao Chen, Guangxi Hu, Jing Wan, Shaofeng Yu, Ye Lu

Summary: This research develops a transistor compact model (TCM) based on a multigradient neural network (MNN) using the PyTorch framework, which can capture the transistor's DC/AC characteristics and high-order derivatives, and is adaptable to various device types. The study shows that this model significantly accelerates the process of creating novel device compact models and circuit benchmark simulations, providing a rapid solution for early-stage design technology co-optimization (DTCO).

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

Article Engineering, Electrical & Electronic

Theoretical Study of Negative Capacitance FinFET With Quasi-Antiferroelectric Material

Fan Zhang, Yue Peng, Xinran Deng, Jiali Huo, Yan Liu, Genquan Han, Zhenhua Wu, Huaxiang Yin, Yue Hao

Summary: This study proposes a quasi-antiferroelectric (QAFE) model for evaluating the electrical characteristics of negative capacitance Fin field-effect transistor (NC-FinFET) integrated with a QAFE gate insulator. The introduction of QAFE is shown to improve the performance of FinFETs, particularly in terms of on-state current enhancement.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

Article Chemistry, Multidisciplinary

Ultrahigh Spin Filter Efficiency, Giant Magnetoresistance and Large Spin Seebeck Coefficient in Monolayer and Bilayer Co-/Fe-/Cu-Phthalocyanine Molecular Devices

Jianhua Liu, Kun Luo, Hudong Chang, Bing Sun, Zhenhua Wu

Summary: The study investigated the spin related electrical and thermoelectric properties of monolayer and bilayer MPc (M = Co, Fe, Cu) molecular devices in different spin configurations, revealing significant advantages in designing high-performance electrical and spintronic molecular devices.

NANOMATERIALS (2021)

Article Chemistry, Multidisciplinary

Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment

Yadong Zhang, Xiaoting Sun, Kunpeng Jia, Huaxiang Yin, Kun Luo, Jiahan Yu, Zhenhua Wu

Summary: The study shows that 2D InSe flakes undergo irreversible degradation when exposed to the atmosphere, affecting the performance of field effect transistors. Using a hard shadow mask instead of lithography can prevent material contamination and achieve high-performance InSe FETs. The InSe FET exhibits low hysteresis, high on/off ratio, relatively high I-on, and low subthreshold swing, suggesting potential for high-performance logic devices.

NANOMATERIALS (2021)

Article Chemistry, Multidisciplinary

Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration

Shujuan Mao, Jianfeng Gao, Xiaobin He, Weibing Liu, Jinbiao Liu, Guilei Wang, Na Zhou, Yanna Luo, Lei Cao, Ran Zhang, Haochen Liu, Xun Li, Yongliang Li, Zhenhua Wu, Junfeng Li, Jun Luo, Chao Zhao, Wenwu Wang, Huaxiang Yin

Summary: This work investigates low-temperature Schottky source/drain (S/D) MOSFETs as the top-tier devices for 3D sequential integration. The study successfully fabricates complementary Schottky S/D FinFETs with a maximum processing temperature of 500 degrees C. Through source/drain extension engineering, the devices achieve competitive driving capability and switching properties compared to conventional devices. The experimental results demonstrate the excellent performance of the devices in CMOS inverters and ring oscillators.

NANOMATERIALS (2022)

Article Engineering, Electrical & Electronic

Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length

Z. R. Xiao, Q. Wang, H. L. Zhu, Z. Chen, Y. K. Zhang, J. J. Li, N. Zhou, J. F. Gao, X. Z. Ai, S. S. Lu, W. X. Huang, W. J. Xiong, Z. Z. Kong, J. J. Xiang, Y. Zhang, J. Zhao, J. B. Liu, Y. H. Lu, G. B. Bai, X. B. He, A. Y. Du, Z. H. Wu, T. Yang, J. F. Li, J. Luo, W. W. Wang, T. C. Ye

Summary: In this work, a novel vertical C-shaped-channel nanosheet field-effect-transistor (VCNFET) with precise control of channel thickness and gate length, and a unique integration flow of Dual Side Process (DSP) is proposed. The VCNFETs are fabricated using high quality Si/SiGe epitaxy, atomic layer etching, and self-aligned high-k metal gate (HKMG). The integration flow is compatible with mainstream CMOS technology. The device exhibits excellent performance with perfect subthreshold slope (SS), small drain-induced barrier lowering (DIBL), and remarkably large on/off ratio.

IEEE ELECTRON DEVICE LETTERS (2022)

Article Engineering, Electrical & Electronic

Vertical N-Type and P-Type Nanosheet FETs With C-Shaped Channel

Z. R. Xiao, H. L. Zhu, Q. Wang, Z. Chen, Z. Y. Liu, Y. K. Zhang, Z. J. Yan, Y. F. Shi, N. Zhou, J. J. Li, J. F. Gao, X. Z. Ai, S. S. Lu, W. X. Huang, W. J. Xiong, Z. Z. Kong, J. J. Xiang, Y. Zhang, J. Zhao, J. B. Liu, Y. H. Lu, G. B. Bai, X. B. He, A. Y. Du, H. Yang, T. Yang, Z. H. Wu, J. F. Li, J. Luo, W. W. Wang, T. C. Ye

Summary: We presented and demonstrated vertical C-shaped-channel nanosheet field-effect transistors (VCNFETs) with precise control of both channel thickness and gate length. The VCNFETs were fabricated using high-quality Si/SiGe epitaxy and atomic layer deposition for nanometer-scale process control and self-aligned high-k metal gate (HKMG). The integration flow is compatible with mainstream industry processes and can be easily extended to vertically stacked devices. Perfect subthreshold swing (SS), small drain-induced barrier lowering (DIBL), and large I-ON/I-OFF ratios were achieved for both n-and p-VCNFETs.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2023)

Article Chemistry, Multidisciplinary

Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique

Hao Chang, Guilei Wang, Hong Yang, Qianqian Liu, Longda Zhou, Zhigang Ji, Ruixi Yu, Zhenhua Wu, Huaxiang Yin, Anyan Du, Junfeng Li, Jun Luo, Chao Zhao, Wenwu Wang

Summary: In this article, an experimental study was conducted on the gate-induced drain leakage (GIDL) current repairing worst hot carrier degradation (HCD) in Si p-FinFETs using an ultra-fast measurement (UFM) technique. It was found that increasing the GIDL bias from 3 V to 4 V achieved a 114.7% V-T recovery ratio from HCD. The over-repair phenomenon of HCD by UFM GIDL was discussed through oxide trap behaviors. The results provide insights into the transistor repairing technique and its implications for the reliable operation of ICs.

NANOMATERIALS (2023)

Article Chemistry, Multidisciplinary

Design Technology Co-Optimization Strategy for Ge Fraction in SiGe Channel of SGOI FinFET

Shixin Li, Zhenhua Wu

Summary: FinFET devices and Silicon-On-Insulator (SOI) devices are two mainstream technical routes that come after the planar MOSFET reached its scaling limit. SOI FinFET devices combine the advantages of both FinFET and SOI devices and can be further enhanced by SiGe channels. This study presents an optimization strategy for the Ge fraction in SiGe Channels of SGOI FinFET devices. Simulation results of RO circuits and SRAM cells demonstrate that adjusting the Ge fraction can enhance the performance and power efficiency of different circuits for various applications.

NANOMATERIALS (2023)

Article Chemistry, Multidisciplinary

The Impact of Ambient Temperature on Electrothermal Characteristics in Stacked Nanosheet Transistors with Multiple Lateral Stacks

Peng Zhao, Lei Cao, Guilei Wang, Zhenhua Wu, Huaxiang Yin

Summary: In this paper, the impact of ambient temperature on the self-heating effect in stacked nanosheet transistors is investigated. The study shows that as the number of lateral stacks increases, the nanoscale devices exhibit more severe thermal crosstalk issues, and the current performance between n- and p-type nanoscale transistors degrades differently. The findings provide an effective design guide for stacked nanosheet transistors in circuit applications.

NANOMATERIALS (2023)

Proceedings Paper Engineering, Multidisciplinary

Investigation on Contacts Thermal Stability for 3D Sequential Integration

S. J. Mao, J. B. Liu, Y. Wang, W. B. Liu, Y. P. Hu, H. W. Cui, R. Zhang, H. C. Liu, Z. X. Wang, N. Zhou, Y. K. Zhang, H. Yang, Z. H. Wu, Y. L. Li, J. F. Gao, A. Y. Du, J. F. Li, J. Luo, W. W. Wang, H. X. Yin

Summary: The thermal stability of n-type and p-type contacts on Si and SiGe has been experimentally investigated, revealing that Ti silicide contacts with Ge pre-amorphization implantation (PAI) demonstrate better performance for n-type contacts, while Ti germanosilicide contacts show superior performance for p-type contacts. Therefore, a single Ti contact scheme has been proven to be more suitable for 3D sequential integration.

2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) (2022)

No Data Available