Journal
NANOSCALE RESEARCH LETTERS
Volume 6, Issue -, Pages -Publisher
SPRINGEROPEN
DOI: 10.1186/1556-276X-6-189
Keywords
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Funding
- MTA (Hungary) [MTA 1102]
- CNR (Italy) [MTA 1102]
- OTKA [K-67969, CK-80126, K 68534]
- TAMOP [4.2.1-08/1-2008-003]
- European Social Fund
- European Regional Development Fund
- 'Bolyai Janos' scholarship
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Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficiently in a-Ge than in a-Si because of the smaller binding energy of the H-Ge bond and probably of a greater weakness of the Ge lattice. This should support the previous hypothesis that the structural degradation of a-Si/a-Ge MLs primary starts with the formation of H bubbles in the Ge layers.
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