Journal
NANOMATERIALS AND NANOTECHNOLOGY
Volume 4, Issue -, Pages -Publisher
SAGE PUBLICATIONS LTD
DOI: 10.5772/58317
Keywords
Nanowires; Epitaxial Growth; Dopant
Funding
- Defense Advanced Research Project Agency (DARPA) [N66001-08-1-2037]
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We investigated the effects of dopants on epitaxial growth of Si NWs, with an emphasis on synthesizing vertical epitaxial Si NW arrays on Si (111) substrates. We found that addition of boron with a B:Si feed-in atomic ratio greater than 1:1000 improved the percentage of Si NWs grown along the vertical < 111 > direction to more than 90%, compared to 38% for i-Si NWs. We also demonstrated a stemmed growth strategy and achieved a 93% percentage of i-Si NW segments along the vertical < 111 > direction on Si substrates. In summary, our study opens up potential for using chemical synthesized vertical Si NW arrays integrated on Si substrates for large-scale applications.
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