Journal
NANO ENERGY
Volume 10, Issue -, Pages 28-36Publisher
ELSEVIER
DOI: 10.1016/j.nanoen.2014.07.018
Keywords
Cu(InGa)Se-2; Stacked precursor; Pre-annealing; Setenization; Ga depth profile
Categories
Funding
- Ministry of Science and Technology [101-2218-E-007-009-MY3, 102-2633-M-007-002, 101-2622-E-492-001-CC2]
- National Tsing Hua University [102N2022E1]
- CNMM the National Tsing Hua University [102N2744E1]
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Modified stacking sequence of precursors and pre-annealing process on Se vapor at low temperature were applied to Cu(ln,Ga)Se-2 (CIGS) solar. The remarkable improvement of efficiency (5.53-10.10% and further 11.04%) and open circuit voltage (0.41 V-0.53 V and further 0.56 V) comes from a compact, smooth microstructure, and modified depth profile of Ga with suitable thickness of CuGa multi-stacking layers in the top of precursors as well as surface bandgap enhancement via pre-nnealing process without Se vapor followed by a specific non-toxic hydrogen-assisted solid Se vapor selenization process. The effects of microstructural, compositional and electrical characteristics of Ga distribution including accumulation and interdiffusion were examined in detail. Finally, a large-area (40 x 30 cm(2)) CIGS solar cell efficiency with improved open circuit voltage (V-OC) and fill factor (FE) of 36% and 14% has been demonstrated, yielding a promising efficiency of similar to 11.04%. (C) 2014 Elsevier Ltd. All rights reserved.
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