Journal
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
Volume 3, Issue 2, Pages 200-206Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TTHZ.2012.2235909
Keywords
Amplification; gain; high electron mobility transistor (HEMT); negative differential conductance (NDC); plasma; resonant tunnel diode (RTD); terahertz (THz)
Funding
- Office of Naval Research [N00014-11-10721]
- National Science Foundation [CAREER ECCS-084910, ECCS-1002088]
- Center for Advanced Diagnostics and Therapeutics (ADT)
- Center for Nanoscience and Technology (NDnano) at the University of Notre Dame
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We report studies of amplification arising from the dynamics of electron plasma waves in a high electron mobility transistor (HEMT) channel with injection from the gate exhibiting negative differential conductance (NDC). The gate NDC can be realized in a resonant tunnel diode (RTD) gate structure integrated in the HEMT. Though the electron plasma wave by itself cannot enable amplification, when coupled with gate NDC, they together form a gain medium at terahertz (THz) frequencies due to the higher plasma wave group velocity than the electron drift velocity. The analysis is developed using a distributed circuit model based on the Dyakonov-Shur hydrodynamic theory. Numerical and analytical results suggest that these devices can realize power amplification with a gain exceeding 5 dB while simultaneously providing conditional stability at THz frequencies.
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