4.5 Article

Improving V-oc With Indium and Alkali Fluorides in Cu(In,Ga)Se-2 Solar Cells Deposited at Low Temperature on Polyimide

Journal

IEEE JOURNAL OF PHOTOVOLTAICS
Volume 8, Issue 5, Pages 1343-1348

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2018.2857928

Keywords

Alkalis; Cu(In,Ga)Se-2 (CIGS); IKF-postdeposition treatment (PDT); KF; lightweight; ordered vacancy compound (OVC); polyimide

Funding

  1. French Government in the frame of Programme d'Investissement d'Avenir [ANR-IEED-002-01]

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Flexible, lightweight, Cu(In,Ga)Se-2 photovoltaic technology is becoming more and more popular, thanks to the very high efficiencies already achieved (>20%) and to the possible employment of roll-to-roll deposition techniques, offering new application opportunities. In this paper, we aim to improve the understanding and performances of recently discovered new front surface engineering approaches. We show that the improvement of V-oc generally observed using heavy alkali (below Na) can be boosted by adding indium during the alkali postdeposition treatments (PDTs). The obtained modification of the absorber using NaF/KF + In PDT leads to an improvement of V-oc by 20 mV with respect to NaF/KF PDT and by almost 50 mV with respect to NaF-PDT only. The electrical performances of solar cells prepared with different PDTs are analyzed and discussed in light of structural and optical characterization data, supported by physical modeling. We show that KF PDTs modify the absorber over a thin region close to the surface, and also deep in the bulk of the film. Our results with KF show a record efficiency of 18.1% without antireflecting coating (ARC), a value that is close to the highest reported value of 20.4% (with ARC).

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