Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 4, Issue 6, Pages 1387-1396Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2014.2344771
Keywords
Atomic layer deposition (ALD); heterojunction; solar cells; sputter damage; zinc oxide
Funding
- EuroTech University Alliance in the framework of the Interface Science for Photovoltaics initiative
- Swiss Commission for Technology and Innovation (CTI) [13348.1]
- Axpo Naturstrom Fonds
- European Commission [608498]
- Office Federal de L'energie (OFEN)
- Fonds national suisse (FNS) Reequip program [206021_139135, 206021_133832]
- FPaceII project
- CHEETAH project
- Dutch Technology Foundation STW through Flash Perspectief program
- Solliance, a solar energy R&D initiative of ECN
- TNO
- Holst
- TU/e
- IMEC
- Forschungszentrum Julich
- Dutch province of Noord-Brabant
- Swiss National Science Foundation (SNF) [206021_133832, 206021_139135] Funding Source: Swiss National Science Foundation (SNF)
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We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection.
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