Reverse Saturation Current Density Imaging of Highly Doped Regions in Silicon Employing Photoluminescence Measurements

Title
Reverse Saturation Current Density Imaging of Highly Doped Regions in Silicon Employing Photoluminescence Measurements
Authors
Keywords
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Journal
IEEE Journal of Photovoltaics
Volume 2, Issue 4, Pages 473-478
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2012-06-28
DOI
10.1109/jphotov.2012.2201916

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