Journal
APL MATERIALS
Volume 3, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4937894
Keywords
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Funding
- Laboratory Directed Research and Development program at Sandia National Laboratories
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
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Compositional-homogeneity and crystalline-orientation are necessary attributes to achieve high thermoelectric performance in Bi1-xSbx thin films. Following deposition in vacuum, and upon air exposure, we find that 50%-95% of the Sb in 100-nm thick films segregates to form a nanocrystalline Sb2O3 surface layer, leaving the film bulk as Bi-metal. However, we demonstrate that a thin SiN capping layer deposited prior to air exposure prevents Sb-segregation, preserving a uniform film composition. Furthermore, the capping layer enables annealing in forming gas to improve crystalline orientations along the preferred trigonal axis, beneficially reducing electrical resistivity. (C) 2015 Author(s).
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