Interfacial Properties of ALD-Deposited Al2O3/p-Type Germanium MOS Structures: Influence of Oxidized Ge Interfacial Layer Dependent on Al2O3 Thickness

Published 2012 View Full Article

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Title
Interfacial Properties of ALD-Deposited Al2O3/p-Type Germanium MOS Structures: Influence of Oxidized Ge Interfacial Layer Dependent on Al2O3 Thickness
Authors
Keywords
-
Journal
ECS Solid State Letters
Volume 1, Issue 2, Pages P32-P34
Publisher
The Electrochemical Society
Online
2012-08-01
DOI
10.1149/2.015202ssl

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