Carrier Transport and Charge Detrapping in Poly(3,4-ethylenedioxythiophene) Doped with Poly(4-styrenesulfonate)/n-Type Si and Polyaniline/n-Type Si Diodes

The effects of charge detrapping on the performances of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/n-type Si (PEDOT: PSS/n-Si) and polyaniline/n-Si diodes were examined in this study. The PEDOT: PSS/n-Si diode shows a poor rectifying behavior. In this work, charge trapping phenomena are studied through time domain measurement. The domination of electron (hole) detrapping was found in the PEDOT: PSS (polyaniline) film. A developed understanding of the charge detrapping/trapping effect is critical for device applications. (C) 2012 The Electrochemical Society.