Journal
AIP ADVANCES
Volume 3, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4803647
Keywords
contact resistance; gallium compounds; grain boundaries; graphene; III-V semiconductors; light emitting diodes; nanowires; Schottky barriers; silver; wide band gap semiconductors
Funding
- National High Technology Program of China [2011AA03A105, 2011AA03A103]
- National Natural Science Foundation of China [60806001, 50972067]
- National Basic Research Program of China [2011CB301904, 2011CB013000]
Ask authors/readers for more resources
Incorporating Ag nanowires with graphene resulted in improved electrical conductivity and enhanced contact properties between graphene and p-GaN. The graphene/AgNWs hybrid films exhibited high transmittance and lower sheet resistance compared to bare graphene. The specific contact resistance between graphene and p-GaN reduced nearly an order of magnitude with the introduction of AgNWs. As a result, light emitting diodes based on the hybrid films showed 44% lower forward voltage and 2-fold higher light output power. The enhanced performance was attributed to the bridging by AgNWs of cracks, grain boundaries in graphene and the reduction of Schottky barrier height at graphene/p-GaN interface. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4803647]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available