Journal
AIP ADVANCES
Volume 2, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3679160
Keywords
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Funding
- Ministry of Education of China [708068]
- National Natural Science Foundation of China [11074211, 51172191, 51002129, 10802071]
- Doctoral Program of Higher Education [2008053 00003]
- Hunan colleges and universities [09K033]
- Hunan Provincial Innovation Foundation for Graduate [CX2011B254]
- Hunan Provincial Education Office General Item [10C1271]
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Topological insulator Bi2Te3 nanoplates with hexagonal, triangular and truncated triangular nanostructures have been fabricated with thickness of similar to 10 nm by vacuum vapor phase deposition method. The possible formation mechanism of Bi2Te3 nanoplates with different nanostructures has been proposed. We have examined the surface potentials of Bi2Te3 nanoplates using Kelvin probe force microscopy. The surface potential of Bi2Te3 nanoplates is determined to be about 482 mV on the SiO2/Si substrate, 88 mV and -112 mV on the n-doped and p-doped Si (111) substrates, respectively. The surface potential information provides insight into understanding electronic properties of Bi2Te3 nanoplates, which may open a new door to the exploration of the topological insulators. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [doi: 10.1063/1.3679160]
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