Slater half-occupation technique revisited: the LDA-1/2 and GGA-1/2 approaches for atomic ionization energies and band gaps in semiconductors
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Title
Slater half-occupation technique revisited: the LDA-1/2 and GGA-1/2 approaches for atomic ionization energies and band gaps in semiconductors
Authors
Keywords
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Journal
AIP Advances
Volume 1, Issue 3, Pages 032119
Publisher
AIP Publishing
Online
2011-08-02
DOI
10.1063/1.3624562
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