4.7 Article

Optically tuned terahertz modulator based on annealed multilayer MoS2

Journal

SCIENTIFIC REPORTS
Volume 6, Issue -, Pages -

Publisher

NATURE PORTFOLIO
DOI: 10.1038/srep22899

Keywords

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Funding

  1. Science and Technology Plan of Beijing [Z141100004214001]
  2. National Natural Science Foundation of China [11104360]
  3. National Special Fund for the Development of Major Research Equipment and Instruments [2012YQ14000508]

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Controlling the propagation properties of terahertz waves is very important in terahertz technologies applied in high-speed communication. Therefore a new-type optically tuned terahertz modulator based on multilayer-MoS2 and silicon is experimentally demonstrated. The terahertz transmission could be significantly modulated by changing the power of the pumping laser. With an annealing treatment as a p-doping method, MoS2 on silicon demonstrates a triple enhancement of terahertz modulation depth compared with the bare silicon. This MoS2-based device even exhibited much higher modulation efficiency than the graphene-based device. We also analyzed the mechanism of the modulation enhancement originated from annealed MoS2, and found that it is different from that of graphene-based device. The unique optical modulating properties of the device exhibit tremendous promise for applications in terahertz switch.

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