Journal
SCIENTIFIC REPORTS
Volume 4, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/srep03940
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Funding
- National Basic Research Program of China (973 Program) [2011CB302103]
- National Natural Science Foundation of China [11074255, 11274308]
- Hundred Talents Program of the Chinese Academy of Sciences
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Automatic release and vertical transferring of silicon/silicon oxide nanowire arrays with a high integrity are demonstrated by an Ag-assisted ammonia etching method. By adding a water steaming step between Ag-assisted HF/H2O2 and ammonia etching to form a SiOx protective layer sheathing Si nanowires, we can tune the composition of the nanowires from SiOx (0 <= x <= 2) to Si nanowires. Ag plays a key role to the neat and uniform release of Si/SiOx nanowire arrays from Si wafer in the ammonia etching process. The vertical Si nanowire array device, with both sides having high-quality Ohmic contact, can be transferred to arbitrary substrates, especially on a flexible substrate. The method developed here offers a facile method to realize flexible Si nanowire array functional devices.
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