Surface Electronic States of 18 Valence Electron Half-Heusler Semiconductors

Comment on “Topological Insulators in Ternary Compounds with a Honeycomb Lattice”

(2013) M. G. Vergniory et al.   PHYSICAL REVIEW LETTERS

Half-metallic antiferromagnetism in Cr2+xSe (0≤x≤1): A first-principles study

(2012) I. Galanakis et al.   PHYSICAL REVIEW B

Half-Heusler Semiconductors as Piezoelectrics

(2012) Anindya Roy et al.   PHYSICAL REVIEW LETTERS

Vacancy induced half-metallicity in half-Heusler semiconductors

(2011) Zhiyong Zhu et al.   PHYSICAL REVIEW B

Half-Heusler ternary compounds as new multifunctional experimental platforms for topological quantum phenomena

(2010) Hsin Lin et al.   NATURE MATERIALS

Tunable multifunctional topological insulators in ternary Heusler compounds

(2010) Stanislav Chadov et al.   NATURE MATERIALS

Electronic transport properties of electron- and hole-doped semiconductingC1bHeusler compounds:NiTi1−xMxSn(M=Sc,V)

(2010) Siham Ouardi et al.   PHYSICAL REVIEW B

Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators

(2010) Di Xiao et al.   PHYSICAL REVIEW LETTERS

Thermoelectric properties of CoTiSb based compounds

(2009) Joachim Barth et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Doped semiconductors as half-metallic materials: Experiments and first-principles calculations ofCoTi1−xMxSb(M=Sc, V, Cr, Mn, Fe)

(2008) Benjamin Balke et al.   PHYSICAL REVIEW B