Journal
OPTICAL MATERIALS EXPRESS
Volume 8, Issue 9, Pages 2941-2947Publisher
OPTICAL SOC AMER
DOI: 10.1364/OME.8.002941
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Funding
- National 111 Center [B12026]
- Fundamental Research Funds for the Central Universities [JBX171103]
- National Natural Science Foundation of China [61604119]
- China Postdoctoral Science Foundation [2016M602771]
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In this report, we demonstrate high spectral responsivity (SR) solar blind deep ultraviolet (UV) beta-Ga2O3 metal-semiconductor-metal (MSM) photodetectors grown by the mist chemical-vapor deposition (Mist-CVD) method. The beta-Ga2O3 thin film was grown on c-plane sapphire substrates, and the fabricated MSM PDs with Al contacts in an interdigitated geometry were found to exhibit peak SR>150A/W for the incident light wavelength of 254 nm at a bias of 20 V. The devices exhibited very low dark current, about 14 pA at 20 V, and showed sharp transients with a photo-to-dark current ratio>10(5). The corresponding external quantum efficiency is over 7 x 10(4%). The excellent deep UV beta-Ga2O3 photodetectors will enable significant advancements for the next-generation photodetection applications. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
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