Journal
OPTICAL MATERIALS EXPRESS
Volume 4, Issue 11, Pages 2346-2354Publisher
OPTICAL SOC AMER
DOI: 10.1364/OME.4.002346
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Funding
- National Basic Research Program of China [2012CB619302]
- Science and Technology Bureau of Wuhan City [2014010101010003]
- Natural Science Foundation of Hubei Province [2011CDA81]
- Science Foundation from Hubei Provincial Department of Education [D20131001]
- Key Laboratory of infrared imaging materials and detectors of Chinese Academy of Sciences [IIMDKFJJ-13-04]
- National Natural Science Foundation of China [10990103, 51002058, 61274010]
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Nonpolar (11 (2) over bar0) a-plane MgZnO films were grown on different a-GaN/r-sapphire templates by pulsed laser deposition (PLD), where the growth temperature of GaN buffer layers varied from 700 degrees C to 1000 degrees C. High-quality a-plane MgZnO epitaxial film was deposited on the optimized 1000 degrees C a-GaN/r-sapphire template. Temperature-dependent PL measurements of a-plane MgZnO films reveal an S-type temperature dependence of the excitonic recombination energy. It is resulted that the excitons are localized in alloy-induced potential fluctuations at low temperature and the room-temperature quantum efficiency is calculated to be 9.2%. An involvement of band-tail states in the radiative recombination was considered, and a quantitative description of the blue temperature-induced shift was obtained assuming a Gaussian shape of the band tail. (C)2014 Optical Society of America
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