Single-step fabrication of luminescent GaAs nanocrystals by pulsed laser ablation in liquids

Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

(2012) R M Farrell et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

(2011) J. Dahl et al.   APPLIED PHYSICS LETTERS

Wavelength-stable rare earth-free green light-emitting diodes for energy efficiency

(2011) Christian Wetzel et al.   OPTICS EXPRESS

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Picosecond pulse laser ablation of yttria-stabilized zirconia from kilohertz to megahertz repetition rates

(2010) Turkka Salminen et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 μm GaInAsN/GaAs quantum well structures

(2010) V. Polojärvi et al.   APPLIED PHYSICS LETTERS

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Passivation of GaAs Nanocrystals by Chemical Functionalization

(2008) Matthew C. Traub et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY