Effects of Ga Composition Ratio and Annealing Temperature on the Electrical Characteristics of Solution-processed IGZO Thin-film Transistors

Published 2014 View Full Article

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Title
Effects of Ga Composition Ratio and Annealing Temperature on the Electrical Characteristics of Solution-processed IGZO Thin-film Transistors
Authors
Keywords
-
Journal
Journal of Semiconductor Technology and Science
Volume 14, Issue 2, Pages 163-168
Publisher
The Institute of Electronics Engineers of Korea
Online
2014-07-17
DOI
10.5573/jsts.2014.14.2.163

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