Article
Engineering, Electrical & Electronic
Rajiv Ranjan Thakur, Nidhi Chaturvedi
Summary: This work focuses on the design optimization and performance analysis of GaN nanowire field effect transistors with gate lengths of 3 nm, 5 nm, and 7 nm. Through simulation, it was found that the performance varied in terms of integration density, power density, I-on/I-off ratio, and switching speed under different gate length conditions. Ultimately, optimized parameters were determined for digital and biosensing applications.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Pattunnarajam Paramasivam, Naveenbalaji Gowthaman, Viranjay M. Srivastava
Summary: This research work focuses on the design and analysis of the structural properties of group IV and III-V oriented, rectangular Silicon and Gallium Arsenide Nanowires using sp(3)d(5)s* tight-binding models. The electrical characteristics of the Nanowires, with the orientation of z [001] and shielded with Lanthanum Oxide, have been analyzed using the Non-Equilibrium Green Function method. The findings show that Gate-All-Around Si Nanowires have superior performance with high (I-ON/I-OFF ratio) and low leakage current.
Article
Chemistry, Multidisciplinary
Hyeuk Jin Han, Sushant Kumar, Gangtae Jin, Xiaoyang Ji, James L. Hart, David J. Hynek, Quynh P. Sam, Vicky Hasse, Claudia Felser, David G. Cahill, Ravishankar Sundararaman, Judy J. Cha
Summary: The increasing resistance of copper (Cu) interconnects in integrated circuits is a major challenge for downscaling beyond 7 nm technology. Topological semimetals like molybdenum phosphide (MoP) nanowires show unprecedented resistivity scaling, superior to nanoscale Cu interconnects. MoP has better stability against electromigration and resistance to surface oxidation compared to Cu, making it an attractive alternative for the scaling challenge of Cu interconnects.
ADVANCED MATERIALS
(2023)
Article
Quantum Science & Technology
Basudev Nag Chowdhury, Sanatan Chattopadhyay
Summary: This study investigates the performance of a dual-gate GaAs-nanowire field-effect transistor (FET) as a charge-qubit device operating at room temperature. By applying appropriate biases, two voltage tunable quantum dots are created within the nanowire channel, allowing for charge-qubit operation at room temperature. The associated electron transport is modeled using the nonequilibrium Green's function formalism. Experimental results show a coherent oscillation frequency of approximately 25 MHz and a characteristic decay time of approximately 70 ns for the qubit. These findings suggest that the dual gate nanowire FET holds promise for charge-qubit operation at room temperature.
ADVANCED QUANTUM TECHNOLOGIES
(2023)
Review
Engineering, Electrical & Electronic
Boyu Wen, Dayan Ban
Summary: The terahertz quantum cascade laser (QCL) has shown high output power and broad frequency coverage, but is currently limited to applications below room temperature. Recent research focuses on increasing the maximum operating temperature to achieve room-temperature operation, intensifying competition and highlighting challenges and future trends in the field.
PROGRESS IN QUANTUM ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Ashkan Horri
Summary: In this paper, a silicon nanowire (SiNW) FET-based DAC is proposed and simulated. The proposed DAC is based on SiNW unit element current cells and logic thermometric decoding block. The simulation results indicate a DNL of [-0.19,0.17]LSB and an INL of [-0.61,0.335]LSB errors that meet the requirement for 5-bit resolution at 0.4 V operating voltage. Also, the low DAC active area of 351 nm(2) was obtained that is suitable for very large-scale integration (VLSI) circuits.
JOURNAL OF COMPUTATIONAL ELECTRONICS
(2023)
Article
Nanoscience & Nanotechnology
Rajiv Ranjan Thakur, Nidhi Chaturvedi
Summary: This paper investigates the design and parameter optimization of a Gate-All-Around GaN Nanowire Field Effect Transistor (GAA GaN NWFET) using various quantum ballistic simulation models. The simulation results demonstrate a novel approach to changing the device mode of operation by varying the nanowire channel thickness, and also reveal innovative methods for threshold voltage tuning. The device shows a high Ion/Ioff ratio of 10(5) and low off-state leakage in the range of 10(-10)-10(-11) A. Simulation work was conducted using a commercially available ATLAS device simulator from Silvaco.
Article
Materials Science, Multidisciplinary
M. Bandyopadhyay, S. Dattagupta
Summary: The study focuses on the coherence-to-decoherence transition in a nanowire modeled as a one-dimensional tight-binding lattice in the presence of an external field and in linear interaction with a boson heat bath. The probability propagator and the probability operator are used to quantify the quantum coherence, with results presented for both low-temperature and high-temperature regimes defined by the Ohmic model.
Article
Engineering, Electrical & Electronic
Yanjie Shao, Marco Pala, David Esseni, Jesus A. del Alamo
Summary: This study investigates the diameter scaling behavior of broken-band GaSb/InAs vertical nanowire Esaki diodes, and finds a great potential for ultra-low power applications. The research includes fabrication and characterization of devices, as well as modeling and simulations.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Nanoscience & Nanotechnology
Weina Zhang, Hongxiang Lei, Liyun Zhong, Wenjie Liu, Juan Li, Yuwen Qin
Summary: Optical manipulation of metal nanowires is crucial for optoelectronic nanosystems, but their strong absorption or scattering properties pose challenges. In this study, precise manipulation of a single Ag nanowire was achieved using an optical scattering force. The forces and torques exerted on the nanowire were analyzed and quantitatively calculated, providing insights into the manipulation mechanism. This scattering-force-based method is stable and applicable for nontransparent structures.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Nicholas J. J. Humphrey, Eric J. J. Choi, Nicholas P. P. Drago, John C. C. Hemminger, Reginald M. M. Penner
Summary: A single platinum nanowire (PtNW) chemiresistive sensor for ethylene gas detection is presented. The PtNW performs self-heating, resistance-based temperature measurement, and detection of ethylene as a resistance change. Ethylene gas in air is detected with a reduction in nanowire resistance by up to 4.5% for concentrations ranging from 1 to 30 ppm in a temperature range of 630 to 660 K. The response is rapid, reversible, and reproducible for repetitive ethylene pulses. The signal amplitude increases threefold as the nanowire thickness is reduced, indicating a surface electron scattering transduction mechanism.
Article
Chemistry, Physical
Sunny Tiwari, Adarsh B. Vasista, Diptabrata Paul, Shailendra K. Chaubey, G. V. Pavan Kumar
Summary: Experimental observation of beaming elastic and surface enhanced Raman scattering (SERS) emission from a bent-nanowire on a mirror (B-NWoM) cavity. The system utilized a self-assembled monolayer of molecules with a well-defined molecular orientation to achieve beaming SERS emission.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Siva Pratap Reddy Mallem, Peddathimula Puneetha, Yeojin Choi, Seung Mun Baek, Sung Jin An, Ki-Sik Im
Summary: Understanding the carrier transport mechanisms in nanowires is crucial for the creation of next-generation nanoscale devices. In this study, the effects of temperature on GaN nanowire wrap-gate transistors (WGTs) made via a top-down technique were examined. The predicted conductance in this transistor remains unchanged up to a temperature of 240 K and then increases as the temperature rises. Different behaviors were observed at different gate voltages, suggesting the presence of phonon and impurity scattering processes on the surface or core of GaN nanowires.
Article
Physics, Condensed Matter
Kaushik Mazumdar, Subindu Saha, Sk Rejuan Ali, Vishwanath Pratap Singh
Summary: The non-equilibrium Green's function (NEGF) method was used to compare the performance of InAs nanowire (NW) and superlattice MOSFET under optical phonon absorption and emission. The results showed fluctuations in the characteristics of NW and revealed a coupling between electrons and phonons as the energy varied. This analysis suggests potential applications for InAs nanowires in nanoelectromechanical devices and phonon detectors.
SUPERLATTICES AND MICROSTRUCTURES
(2021)
Article
Engineering, Multidisciplinary
K. S. Cariappa, Niladri Sarkar
Summary: This study investigates the impact of defects on electron density profiles in nanowire FETs with a rectangular cross-section. A framework for discretizing nanowire channels with defects is presented, and a self-consistent procedure using Schrodinger-Poisson solver calculates local electron density profiles. The study shows that increasing scattering potential in the nanowire channel significantly decreases saturation voltage and current, leading to faster saturation and altered device performance.
ENGINEERING RESEARCH EXPRESS
(2021)
