Journal
NANOSCALE RESEARCH LETTERS
Volume 10, Issue -, Pages 1-6Publisher
SPRINGEROPEN
DOI: 10.1186/s11671-014-0718-x
Keywords
Inverted nanocone arrays; Antireflection; Nanosphere lithography; Si
Funding
- 973 Program [2013CB632701]
- National Natural Science Foundation of China [51202163]
- Innovation Program of Shanghai Municipal Education Commission [09YZ151, 13ZZ025]
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In this work, highly-ordered silicon inverted nanocone arrays are fabricated by integration of nanosphere lithography with reactive ion etching (RIE) method. The optical characteristics of as-prepared Si inverted nanocone arrays are investigated both by experiments and simulations. It is found that the Si nanocone arrays present excellent broadband light antireflectance properties, which are attributed to the gradient in the effective refractive index of nanocones and enhanced light trapping owing to optical diffraction. The inverted Si nanocone arrays might find a variety of applications in solar cells and photodetectors.
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