4.8 Article

Quantum simulation of ZnO nanowire piezotronics

Journal

NANO ENERGY
Volume 15, Issue -, Pages 776-781

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.nanoen.2015.06.002

Keywords

Piezotronics; Quantum simulation

Funding

  1. EPSRC [EP/H004742/1] Funding Source: UKRI
  2. Engineering and Physical Sciences Research Council [EP/H004742/1] Funding Source: researchfish

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We address the problem of quantum transport in a nanometre sized two-terminal ZnO device subject to an external strain. The two junctions formed between the electrodes and the ZnO are generally taken as Ohmic and Schottky type, respectively. Unlike the conventional treatment to the piezopotential, we treat it as a potential barrier which is only induced at the interfaces. By calculating the transmission coefficient of a Fermi-energized electron that flows from one end to the other, it is found that the piezopotential has the effect of modulating the voltage threshold of the current flowing. The calculations are based on the quantum scattering theory. The work is believed to pave the way for investigating the quantum piezotronics. (C) 2015 Elsevier Ltd. All rights reserved.

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