Journal
NANO ENERGY
Volume 13, Issue -, Pages 240-248Publisher
ELSEVIER
DOI: 10.1016/j.nanoen.2015.02.014
Keywords
BiFeO3; Carrier lifetime; Fermi-level pinning; Nanowires; Photoresponse; Surface states
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Funding
- Canada Excellence Research Chair (CERC) program
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Enhanced photo-collection and increased carrier lifetimes in semiconductor BiFeO3 (BFO) single nanowire under visible illumination have been reported in this paper. As a direct result of radial surface potential due to Fermi level pinning caused by high density of surface states in BFO nanowire, a highly efficient carrier separation has been observed. The measured carrier lifetimes in BFO nanowire are three orders magnitude higher than the reported values in bulk. We have obtained the equilibrium carrier concentration similar to 5.4 x 10(17)/cm(3) and assumed a mobility value similar to 3 cm(2) (V/s) at room temperature in the BFO nanowire. We believe that BFO nanowires with visible photo-response and long carrier life time are promising for nanoscale optoelectronic applications. (C) 2015 Elsevier Ltd. All rights reserved.
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