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Title
Symmetry regimes for circular photocurrents in monolayer MoSe2
Authors
Keywords
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Journal
Nature Communications
Volume 9, Issue 1, Pages -
Publisher
Springer Nature America, Inc
Online
2018-08-15
DOI
10.1038/s41467-018-05734-z
References
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Note: Only part of the references are listed.- Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping
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- Controlling the Schottky barrier atMoS2/metal contacts by inserting a BN monolayer
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- Topological Valley Currents in Gapped Dirac Materials
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- Voltage-tunable circular photogalvanic effect in silicon nanowires
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- Dichroic spin–valley photocurrent in monolayer molybdenum disulphide
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- Single-layer MoS2 roughness and sliding friction quenching by interaction with atomically flat substrates
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- Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
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- The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2
- (2014) Michele Buscema et al. Nano Research
- Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2
- (2014) Hongtao Yuan et al. Nature Nanotechnology
- Exciton valley dynamics probed by Kerr rotation inWSe2monolayers
- (2014) C. R. Zhu et al. PHYSICAL REVIEW B
- The valley Hall effect in MoS2 transistors
- (2014) K. F. Mak et al. SCIENCE
- Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2
- (2013) Britton W. H. Baugher et al. NANO LETTERS
- High frequency electric field induced nonlinear effects in graphene
- (2013) M.M. Glazov et al. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS
- Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
- (2012) Di Xiao et al. PHYSICAL REVIEW LETTERS
- Boron nitride substrates for high-quality graphene electronics
- (2010) C. R. Dean et al. Nature Nanotechnology
- Confinement-Induced Berry Phase and Helicity-Dependent Photocurrents
- (2010) J. E. Moore et al. PHYSICAL REVIEW LETTERS
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