Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 5, Issue 3, Pages 897-902Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2015.2405754
Keywords
Metal oxide; organic photovoltaic (OPV); PEDOT:PSS; thermal annealing
Funding
- Korea Institute of Energy Technology Evaluation and Planning - Korea government Ministry of Trade, Industry, and Energy [20134010200490]
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We report the effects of postannealing on the photovoltaic performance of ITO/LZO/P3HT: ICBA/PEDOT: PSS:WOx/Al. The electrical characteristics of the PEDOT: PSS:WOx film can be controlled through an annealing treatment, which exhibits a short-circuit current density of 9.37 mA/cm(2), an opencircuit voltage of 0.86V, and a power conversion efficiency of 5.54% under AM1.5 illumination (100 mW/cm2). By annealing the device at 150 degrees C, a favorable phase separation in the PEDOT: PSS:WOx is obtained, and the PCE increases by 23.27% compared with that of the nonannealed device. The Voc increases with the annealing temperature, and it is worth noting that the PEDOT: PSS device only experienced a 2.40% decrease in PCE after 150 degrees C annealing treatment.
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