Advantage of Ti-Doped Ge2Sb2Te5 Material for Phase Change Memory Applications

Published 2015 View Full Article

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Title
Advantage of Ti-Doped Ge2Sb2Te5 Material for Phase Change Memory Applications
Authors
Keywords
-
Journal
ECS Solid State Letters
Volume 4, Issue 12, Pages P102-P104
Publisher
The Electrochemical Society
Online
2015-10-21
DOI
10.1149/2.0081512ssl

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