Effect of Post-Deposition Annealing on the Interface Electronic Structures of Al2O3-Capped GaN and GaN/AlGaN/GaN Heterostructure

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Title
Effect of Post-Deposition Annealing on the Interface Electronic Structures of Al2O3-Capped GaN and GaN/AlGaN/GaN Heterostructure
Authors
Keywords
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Journal
ECS Journal of Solid State Science and Technology
Volume 4, Issue 9, Pages P364-P368
Publisher
The Electrochemical Society
Online
2015-07-30
DOI
10.1149/2.0081509jss

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