Journal
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume 4, Issue 5, Pages Q43-Q45Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0261505jss
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Funding
- Corning Incorporated
- NSF MRSEC [DMR-1120296]
- NSF [ECCS-0335765]
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This paper examines the correlation between deposition parameters and crystallinity, texture, and etch rate of reactively sputtered c-axis aligned crystalline (CAAC) IGZO films. Both X-ray diffraction and general area detector diffraction (GADDS) showed that crystallinity increases rapidly above 200 degrees C with simultaneous formation of highly aligned CAAC. Optimal texture with a c-axis alignment and a minimum GADDS full-width-at-half-maximum of 18 degrees occurred at 250 degrees C, with c-axis alignment decreasing at higher temperatures to a FWHM of 35 degrees at 385 degrees C. Chemical etch rate in 5 vol% HCl was highly correlated to crystallinity, dropping by a factor of ten in CAAC compared to amorphous IGZO; etch rate hence provides a highly sensitive measure of crystallinity. (C) 2015 The Electrochemical Society. All rights reserved.
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