In-N codoped p-type ZnMgO thin films with bandgap engineering

In-N codoped p-type ZnMgO films have been prepared by direct current reactive magnetron sputtering. The effect of Mg content on the properties of In-N codoped ZnMgO films was examined. The Mg content in the film is directly proportional to that in the target suggesting the same sputtering mechanism of Zn and Mg. The p-type behaviour of ZnMgO films was deteriorated with the Mg content increasing. The bandgap engineering, due to the fact of Mg substituting Zn, was realized in p-type ZnMgO films. (C) 2010 Elsevier Ltd. All rights reserved.