Journal
ULTRAMICROSCOPY
Volume 135, Issue -, Pages 43-49Publisher
ELSEVIER
DOI: 10.1016/j.ultramic.2013.06.002
Keywords
Backscattered electrons; Low Voltage Scanning Electron Microscopy; Work function effects; Surface properties
Categories
Ask authors/readers for more resources
Due to the influence of refraction effects on the escape probability of the Back- Scattered Electrons (BSE), an expression of the fraction of these BSE is given as a function of the beam energy, E degrees, and emission angle (with respect to the normal) a. It has been shown that these effects are very sensitive to a local change of the work function in particular for low emerging angles. This sensitivity suggests a new type of contrast in Low Voltage Scanning Electron Microscopy (LVSEM for E degrees<2 keV): the work function contrast. Involving the change of. with crystalline orientation, this possibility is supported by a new interpretation of a few published images. Some other correlated contrasts are also suggested. These are topographical contrasts or contrasts due to subsurface particles and cracks. Practical considerations of the detection system and its optimization are indicated. (C) 2013 Elsevier B. V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available