Journal
ADVANCED OPTICAL MATERIALS
Volume 4, Issue 4, Pages 505-521Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201500526
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Funding
- Seoul National University (SNU)-Yonsei Research Cooperation Program through SNU
- National Research Foundation of Korea (NRF) grant - Korea government (MSIP) [NRF 2014040726, NRF-2015R1A5A1037627]
- National Research Foundation of Korea [2015R1A5A1037627, 2011-0019984, 21A20130012631] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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There have been significant recent developments in the growth of single-crystal gallium nitride (GaN) on unconventional templates for large-area blue or green light-emitting diodes (LEDs) which, together with layer transfer onto foreign substrates, can enable flexible and stretchable lighting applications. Here, the heteroepitaxial growth of GaN on amorphous and single-crystal substrates employing various interlayers and nucleation layers is reviewed, as well as the use of weak interfaces for layer-transfer onto foreign substrates. Recent progress in low-temperature GaN-based red-green-blue (RGB) LEDs on glass substrates, which has exhibited a calculated efficiency of 11% compared with that from commertial LEDs, is discussed. Layer-transfer techniques with various interlayers are also discussed. These heteroepitaxial GaN growth and layer-transfer technologies are expected to lead to new lighting and display devices with high efficiency and full-color tunability, which are suitable for large-area, stretchable display and lighting applications.
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