4.7 Article

Microstructure and electrical properties of sol-gel derived Ni-doped CaCu3Ti4O12 ceramics

Journal

TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA
Volume 22, Issue -, Pages S127-S132

Publisher

ELSEVIER
DOI: 10.1016/S1003-6326(12)61696-3

Keywords

CaCu3Ti4O12; sol-gel; capacitors; memory devices; electrical properties; microstructure; phase transition

Funding

  1. Natural Science Foundation of Jiangsu Province [BK2011243, BK2012156]
  2. State Key Laboratory of Electrical Insulation and Power Equipment [EIPE11204]
  3. State Key Laboratory of New Ceramic and Fine Processing [KF201104]
  4. State key Laboratory of Electronic Thin Films and Integrated Devices [KFJJ201105]
  5. Universities Natural Science Research Project of Jiangsu Province [10KJD430002]
  6. Application Program for Basic Research of Changzhou [CJ20125001]
  7. Research Foundation of Jiangsu University [11JDG084]

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Dielectric properties and varistor performance of sol-gel prepared Ni-doped calcium copper titanate ceramics (CaCu3NixTi4O12+x, x=0, 0.1, 0.2, 0.3) were investigated. SEM and XRD were used in the microstructural studies of the specimens and the electrical properties were investigated for varistors. XRD patterns show that the CCTO ceramics were single phase with no Cu-rich phase. SEM results indicated that the samples had smaller grain sizes than those synthesized by traditional solid-state reaction methods. The experimental results show that the highest dielectric constant and lower dielectric loss occur when x=0.2. When x=0.3, the lowest leakage current is obtained and the maximum value reaches 0.295; meanwhile, the lowest threshold voltage and nonlinear coefficient are found, the minimum values of them are 1326 V/mm and 3.1, respectively.

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