Journal
THIN SOLID FILMS
Volume 550, Issue -, Pages 504-508Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2013.10.116
Keywords
Sol-gel; Magnesium zinc tin oxide; Thin-film transistor; Bias-stress stability
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Funding
- Korea Science and Engineering Foundation (KOSEF)
- Korea government (MEST) [2012-0002852]
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Solution-processed thin film transistors (TFTs) using a magnesium zinc tin oxide (MZTO, Ma-Zn-Sn-O) channel layer were fabricated and bias-stress stability during device operation was evaluated. The cause of the bias-stress instability was investigated through comparison with zinc tin oxide (ZTO, Zn-Sn-O) TFTs. The MZTO layers had a significantly lower oxygen vacancy concentration than the ZTO layer, which affected the electrical characteristics as well as bias-stress stability of MZTO TFTs. When 2 mol% Mg was added, a more stable transistor was attained, showing a typical semiconductor behavior with a saturation mobility of 0.27 cm(2)/V.s, on/off ratio of 3.3 x 10(6), off-current of 5.3 x 10(-12)A, and threshold voltage of 5.4 V. (C) 2013 Elsevier B.V. All rights reserved.
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