Journal
THIN SOLID FILMS
Volume 571, Issue -, Pages 56-61Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2014.09.060
Keywords
Charge carrier mobility; Organic field-effect transistor; Current-voltage characteristics
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Funding
- National Science Centre Poland [DEC-2012/07/B/ST5/00759, DEC-2011/03/N/ST5/04705]
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A semi-quantitative model is put forward elucidating the role of spatial inhomogeneity of charge carrier mobility in organic field-effect transistors. The model, based on electrostatic arguments, allows estimating the effective thickness of the conducting channel and its changes in function of source-drain and gate voltages. Local mobility gradients in the direction perpendicular to the insulator/semiconductor interface translate into voltage dependences of the average carrier mobility in the channel, resulting in positive or negative deviations of current-voltage characteristics from their expected shapes. The proposed effect supplements those described in the literature, i.e., density-dependent mobility of charge carriers, short-channel effects, and contribution of contact resistance. (C) 2014 Elsevier B.V. All rights reserved.
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