Self-aligned top-gate InGaZnO thin film transistors using SiO2/Al2O3 stack gate dielectric

Published 2013 View Full Article

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Title
Self-aligned top-gate InGaZnO thin film transistors using SiO2/Al2O3 stack gate dielectric
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 548, Issue -, Pages 572-575
Publisher
Elsevier BV
Online
2013-09-17
DOI
10.1016/j.tsf.2013.09.020

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