Journal
THIN SOLID FILMS
Volume 548, Issue -, Pages 195-201Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2013.09.063
Keywords
Nb2O5; Thin films; Dielectric constant; X-ray photoelectron spectroscopy; Nb(OC2H5)(5); Direct liquid injection-chemical vapor deposition
Categories
Funding
- Korea Research Foundation (KRF) through the National Research Laboratory Project
Ask authors/readers for more resources
Niobium oxide thin films were grown by direct liquid injection chemical vapor deposition using Nb(OC2H5)(5) precursor. Influence of reactant's molar ratios [oxygen: Nb(OC2H5)(5)] and deposition temperatures on films properties such as growth rate, stoichiometry, crystal structure, morphology, dielectric constant and leakage current were studied. Films start crystallizing above 340 degrees C in O-2 atmosphere and become crystalline at 400 degrees C. The surface roughness of weakly crystalline and crystalline films was significantly affected by deposition temperatures and reactant's molar ratios. It was found that decrease in surface roughness improved leakage current. X-ray photoelectron spectroscopic studies showed that films were in different oxidation states (Nb2+, Nb4+ and Nb5+). The dielectric constants of films were improved by increasing oxygen ratios. At ratio (150: 1), the film showed high dielectric constant value (47) at 340 degrees C and leakage current density of 2.0 x 10(-5) A/cm(2) (at 3 V). (C) 2013 Elsevier B. V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available